Ion beam etching is a dry etch technique where (Ar) ions are accelerated towards the substrate. On the substrate the ions release their kinetic enrgy which results in etching of the substrate material.

The Ion Beam Etcher is used to etch metals or other materials that are not allowed in our ICP-RIE etchers.

• Materials allowed: Very few restrictions but always check with instrument responsible first!
• Sample sizes: From small pieces up to 4"
• Process gases: Ar and O2.
• Ion source: 30cm, 5kW
• Operating temperature: 10°C to 300°C
• Base Pressure: 2E-7Torr
• Substrate Tilting: -90° to +65°
• Substrate Rotation: Up to 20 RPM
• Substrate Cooling: He backside cooling
• Typical applications: Metals including Au and Pt