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Inductively Coupled Plasma etching is an anisotropic dry-etching process where material is removed with the use of chemically reactive plasma under a low pressure (~1-100 mTorr). Typically the material removed is a thinfilm previously deposited on a wafer. The ICP-RIE uses two independent RF sources, one to strike plasma in a gas mixture and one to create a DC bias which extracts and accelerates ions and radicals from the plasma towards a sample surface. This gives indipendent control of ion density and energy. ICP RIE is a popular dry-etching technique because of its possibilty for high ecth rates, great selectivity and reduced ion bombardment.


  • Materials allowed: everything which is not considered as contaminating within NanoLab rules, sample size can’t exceed 101.7 mm (4”) in diameter and 5 mm in thickness.
  • Process gases: H2, O2, N2, Ar, CF4, SF6, CHF3, He, CH4, Cl2 and BCl3.
  • Standard operating temperature: 20°C
  • 13.56 MHz RF source
  • Typical applications: Anisotropic polymide and SiO2 etchin
  • Base pressure: 5E-7 Torr
Tool name:
ICP-RIE Chiller
Thin Film & Dry Etch
Dry etch
Oxford Instruments
Plasmalab System 100 ICP-RIE 180
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