Picture of Rapid Thermal Processing (RTP) Oven
Current status:
AVAILABLE
Book | Log
Show/Collapse all

1st Responsible:
2nd Responsible:
You must be logged in to view files.

The RTP oven can be used for several different applications like annealing for silicon and compound semiconductor wafers (RTA), rapid thermal oxidation (RTO), rapid thermal nitridation (RTN), rapid thermal diffusion from spin-on dopant, crystallization, contact alloying and more.

The JetFirst 200 furnace has a stainless steel chamber suitable for rapid heating of thin films under controlled atmosphere or vacuum. It is suitable for processing up to 200 mm wafers, as well as powders and non-conductive materials in a temperature range up to 1000°C.

Materials allowed:

III-V, Si

  • Max temperature: 1000°C
  • Maximum heating range of 50°C/s
  • 1 N2 purge gas line
  • 3 process gas lines (O2, N2 and 5%H2 in Ar)
  • Equipped with 16, 6000W halogen lamps

Limitations:

Temperature Max hold time
T<500°C 3 hours
T<700°C 1 hour
T<1000°C 10 min
   

 

Tool name:
Rapid Thermal Processing (RTP) Oven
Area/room:
Chemical area
Category:
Thermal processes
Manufacturer:
Jipelec
Model:
Jetfirst 200 mm
Tool rate:
B
Max booking time, day:
9 hours
Max booking time, night:
16 hours
No. of future bookings:
4

Instructors

Licensed Users

You must be logged in to view tool modes.