Deep Silicon Etching (DRIE) is a dry etch technique to etch (deep into) silicon. It makes use of the Bosch-process where etch steps and side wall passivation steps alternate. C4F8 gas is used to create a passivation layer (side wall protection) and SF6 is used to etch. It is a technique that is very suitable to create deep anisotropic features with a high aspect ratio or to create deep trenches,

This tool can only etch silicon. For other materials the ICP-RIE's or IBE can be used.

Materials allowed: Primarily Si wafers with photo-resist mask or SiO2 mask.

Materials not allowed: No metals in general incl. Au, Pt, Cu, Zn, Li or materials with high vapor pressure

Typical mask selectivity: around 12 for PR masks, up till >400 for SiO2 masks

Training duration: 2 hours